VisIC Technologies partners with TSMC to 1200V GaN-based Power Device Solutions
VisIC Technologies, developing and marketing efficient GaN-based Power Device components for energy conversion systems, is now sampling the industry's first 1200V GaN modules, and is announcing a major manufacturing partnership with TSMC on their GaN on silicon technologies that were announced last year. Engineering samples are now in design with lead customers, and trade demonstrations will take place during PCIM China 2018 Shanghai.
This extremely fast power switch module performs with the highest efficiency in the industry, enabling small yet efficient xEV chargers and uninterruptible power supply (UPS) systems.
The new VisIC module, based on TSMC's 650D GaN-on-Silicon process, leverages the wide band gap technology that is revolutionizing the world of xEV power electronics and data center power supplies. TSMC's GaN on Silicon process further provides high yield and fast ramp-up capabilities, while VisIC's GaN transistor design brings unprecedented levels of performance. Switching time below 10 nanoseconds is ensured by a high electron mobility transistor (HEMT) design, where electrons flow in a 2-dimentional quantum well, which fundamentally differs from electron flow in SiC MOSFETs.
With 1200V ratings, the GaN module offers typical on resistance of just 40 mΩ. Target applications are power converters for motor drives, three-phase power supplies and other applications requiring current switching up to 50 A.
VisIC's 1200V GaN device is a half-bridge module that integrates GaN high-electron mobility transistors (HEMTs) with push-pull and over-current and over-temperature protections in a single package. The design takes advantage of VisIC's innovative Advanced Low Loss Switch (ALL-Switch) technology, which uses a patented, high-density lateral layout that results in fast switching performance and low RDS(on).
The high-voltage GaN module offers reduced gate charge and capacitances with low RDS(on), so the switching energy for the GaN device is as low as 140 µJ. Consequently, the switching losses are three to five times lower as compared to comparable silicon carbide MOSFETs.